During the measurement process, the pressure directly acts on the diaphragm of the sensor, causing the diaphragm to generate a micro-displacement proportional to the pressure of the medium, causing the resistance of the sensor to change, and detecting the change through the electronic circuit, and converting the output. A standard signal corresponding to this pressure, such a process is the process of measurement by the micro pressure sensor.
For micro pressure sensors, sensitivity and linearity are the two most important performance indicators for micro pressure sensors. In order to produce a sensor that can meet the needs of practical applications, an effective simulation method for the sensitivity and linearity of the micro pressure sensor must be explored. In the actual research, a simulation method based on finite element analysis (FEA) and path integral of the surface stress of piezoresistive pressure sensor film was found. Through this method, the accurate estimation of the sensor voltage output value under different pressure values ​​in the full-scale range is realized. Based on this, the sensitivity and linearity of the pressure sensor are effectively simulated.
The micro-pressure sensor has developed rapidly. The newly developed sensor uses a piezoelectric single-chip structure and a preamplifier. The amplifier amplifies the weak signal and realizes the impedance transformation, so that the sensor has small range, high sensitivity and good anti-interference. Features. Such sensors have been widely used for the detection of small signals such as pulse and wall pressure fluctuations. At the same time, however, for the technical problem of verifying the accuracy of the micro pressure sensor, there is an urgent need for a simple measuring device to measure the performance of this type of sensor.
In order to solve the contradiction between sensitivity and nonlinearity of the micro pressure sensor, in terms of structure, the advantages of the integrated beam membrane structure and the flat membrane double island structure are adopted, and the double island-beam structure is adopted. The area of ​​the island area is not scaled up or down. First, in order to increase the sensitivity, the length and width of the narrow beam region should be minimized. Since it is found from the finite element analysis and approximate analytical analysis of the "beam-membrane-island" structure, reducing the length and width of the narrow beam region can significantly increase the stress on the beam. And when the length of the middle narrow beam is about twice the length of the narrow beam on both sides, the linearity of the device is the best. Although there is a dual island limit structure, in the case of high overload, the silicon film will first rupture from the edge and corner regions of the island. This is because the conventional island film structure is formed by a conventional masked anisotropic wet etching to form a silicon film and a back island from the back side of the silicon wafer. The silicon film is a crystal face, and the sides of the frame and the back island are both crystal faces with an acute angle of 54.74°. According to the mechanical principle, there is a stress concentration effect in the corner region, so that after the silicon film is pressed on the front or back, the corner region will have an extreme value of stress, so the crack first occurs from there. After the introduction of the stress-dispersion structure, the corner region is changed into a rounded region having a certain curvature, so that the extreme value of the stress in the region is lowered. At the junction of the silicon film and the frame or the back island, a graded structure having a certain curvature and half warp is formed, which is not achievable by the general conventional anisotropic wet etching. To this end, a mask-maskless anisotropic wet etching technique is employed.
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