It is understood that the first module crystal growth furnace began to produce full capacity in early October, using a large-capacity 37kg crystal growth furnace to produce high-quality C-to-sapphire ingots by heat exchange.
The shape of the ingot is round, smooth and crystal clear. After quality inspection, the ingot has a diameter of 260mm, a height of 150mm and a weight of 37.2kg. The crystal has no inlay, no light path, no bubble, no cracking, no flicker, and the technology surpasses the world peers. At present, mainland China's domestic manufacturers are unparalleled in Class A high quality sapphire ingot products.
The GCL Xining LED Sapphire project is promoted in three modules. Each module has 160 sets of advanced crystal growth furnaces and 300 sets of cutting, grinding and polishing equipment. After the project is fully put into production, it will produce 15 million pieces of sapphire single crystal substrate per year; annual sales will reach 10 billion yuan, and profits and taxes will be 4 billion yuan.
The successful production of the first module production line of GCL Xining LED Sapphire will speed up the construction of the second and third modules. GCL said that the second and third modules will all adopt high-automatic, high-utilization crystal growth furnaces. It is expected that the research and development of large-capacity ingots will be completed by the end of 2011, and all 4 to 6-inch chips will be mass-produced. At the end of June 2012, all three modules will be put into operation, and the annual production capacity of sapphire single crystal substrate will be 15 million pieces. It will become one of the largest sapphire production bases in China.
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