Toshiba the world's first injection layer 148 stacked 3D structures flash note 2, the flash memory capacity of 256Gb (32GB), while using the industry-leading third order storage unit (TLC) techniques. This new flash is suitable for a variety of product applications, including consumer-grade solid-state drives (SSDs), smartphones, tablets and memory cards, and enterprise-class SSDs for data centers. It is reported that samples will be shipped in September.
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Toshiba's world's first 256Gb, 48-layer stacked flash memory BiCS FLASH
Toshiba's BiCS FLASH uses the world's most advanced 48-layer stacking process, surpassing the capacity of mainstream 2D ​​NAND flash memory, while increasing the number of write/erase times and reliability, and increasing the write speed.
Since 2007 the world's first launch of a 3D stacked structure since Flash Note 3, Toshiba has been working to optimize the development of mass production. To better meet the needs of the fast-growing flash memory market, Toshiba will target high-capacity, miniaturized applications, actively promote 3D stacked-structure flash memory, and launch a portfolio of SSDs.
Toshiba first developed NAND flash memory in the world in 1987. As the creator of the flash memory world, Toshiba has been pursuing a professional spirit to provide consumers with a high-speed, high-quality professional flash memory experience. At present, this product is being produced at the Toshiba Yokkaichi plant, and the new plant, which is expected to be completed in the first half of 2016, will also produce the product.
Note 1: According to Toshiba investigation.
Note 2: A structure in which flash memory cells are vertically stacked on a silicon substrate, which greatly increases the density compared to planar NAND flash memory (the memory cells are on a silicon substrate).
Note 3: According to Toshiba's release information on June 12, 2007
* BiCS FLASH TM is a trademark of Toshiba Corporation.
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