Founded in 2003, AZZURRO Semiconductor has a patented large-diameter silicon substrate GaN-on-Si technology from Magdeburg University in Germany. In October 2010, it received 4 including Wellington Partners, Good Energies and Emerald. After a total investment of 15 million euros, the venture capitalists have officially set up a company and capacity in Dresden and started mass production.
AZZURRO currently has two MOCVD (Organic Metal Chemical Vapor Deposition) machines, which will be in volume production in October 2011 and are expected to reach 1,400 wafers per month (150 () wafers. The company will continue to expand its production capacity in the future, planning to reach 10,000 wafers per month in 2013 and 27,000 wafers in 2015.
Note: Using AZZURRO's patented stress control technology, the curvature of the GaN film on the silicon substrate can be accurately controlled. (Click to enlarge)
LED is a fast-growing market with a market size of more than 11 billion US dollars. Whether it is a backlight design for TV, laptop and mobile devices, or solid-state lighting applications, it is a business opportunity that many companies are optimistic about, and it attracts many The industry is engaged and the market competition is very intense.
At present, the LED industry is still based on 50mm (2å‹) or 100mm (4å‹) sapphire substrates. If large-diameter silicon substrate GaN-on-Si technology can be utilized, it is possible to fully utilize the existing GaN-on-Si technology. The complete technology and economies of scale of the silicon crystal ecosystem achieve the goal of reducing the overall LED cost. If you compare the current 150mm (6å‹) sapphire substrate with 150mm (6å‹) wafers using AZZURRO's patented GaN-on-Si technology, you can achieve more than 75% material cost savings.
Although GaN-on-Si has a significant cost advantage, it has not been widely used in the LED industry due to technical difficulties. The main problem is that due to the difference in thermal expansion coefficient between the silicon substrate and GaN, stress is generated in the process due to lattice misalignment between the two materials, thereby forming a problem of unevenness of the bow and film thickness.
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