product description
1. No internal matching design to maximize the broadband characteristics and versatility of the product.
2. According to the different combinations of chips and packages, the power covers 6W-180W and other grades, and the frequency is up to 6GHz.
3. The product is compatible with 28-32V power supply, and the product is calibrated at 28V.
4. The metallization of Die attach, Wire bonding, and package is fully integrated with the gold (Au) system.
5. The industry standard package form, the default form of the product is Eared, which can meet various assembly requirements such as welding and screw fixing. (And provide an earless Earless package, please consult us). include
Single Ended device: MME/GXB
Push Pull device: LBB
6. High thermal conductivity material flange base to effectively improve product performance and reliability
7. The product performs complete DC and RF testing to ensure consistent performance.
8. The junction temperature control below 200 degrees Celsius ensures an average time between failures on the order of millions of hours.
product list
Application scenario
GaN HEMTs (GaN High Electron Mobility Transistors) are preferred for devices in the following applications due to their high power density, low parasitic parameters, and high cut-off frequency (Ft) characteristics:
All forms of power amplifiers above 3 GHz
High-efficiency narrow-band power amplifier that cannot be satisfied by technologies such as LDMOS below 3 GHz
Matching compact or miniaturized power amplifiers
>20% relative bandwidth wideband power amplifier
Ultra-wideband and octave power amplifier
Power amplifier operating in switch mode or harmonic modulation mode
typical application:
Broadband and ultra-wideband communications
Mobile communication
Test and measurement amplifier
Commercial pulse amplifier
Linear amplifier
Industry / Technology / Medical
Application points
1. Device pin definition
Considering the compatibility with LDMOS products and the habits of most customers, the output leg of the device, that is, Drain is defaulted to the side with the corner, and the other side is the input gate, which is different from some brands on the market. Please pay attention when using the customer.
2. Recommended installation method of the device
In general, our application demonstration circuits use direct soldering of the device to achieve the lowest overall thermal resistance and effectively reduce the source inductance of the ground. This is especially important for high power density devices such as GaN, especially When using applications such as broadband high power, we recommend that customers use soldering devices. If the customer can't solder the device, it must be fixed by conventional screws, etc. Please pay attention to provide effective heat dissipation.
3. How to consider the boosting of the device
Usually the device is calibrated at 28V. If the customer needs to obtain higher output power or improve linearity, etc., it is feasible to increase the operating voltage, for example, from 28V to 32V, usually with 0.5-1dB power boost; At the same time as the benefits, please pay attention to the negative factors such as the corresponding increase in heat dissipation pressure. Our device is recommended to be used below 32V. If you need to increase the voltage further, please consult us.
4. How to understand the output power of the device
Our calibration of the power output capability takes into account the power density of the chip and the application environment, and is usually based on the achievable output capability under medium bandwidth conditions. Different output powers will be realized depending on the customer's use. At the same time, the nominal power refers to the saturated output power under 3dB compression. Taking the NME4004H as an example, as a nominal 40W device, it can achieve output greater than 50W in narrowband or point frequency applications, but in ultra-wideband applications such as octave, the minimum output capability of the entire frequency band will drop to 40W. Hereinafter, for example, 30W. Please consult our technical support for details.
5. Continuous wave CW and pulse application
The devices support continuous wave and pulse applications, and the pulse power is slightly higher than the continuous wave power under common heat dissipation conditions.
Can the 6.28V general purpose GaN be used in mobile communication power amplifiers?
Yes, it can be used in all sub-6GHz applications, including all bands of mobile communication. However, considering the characteristics of mobile communication, we have developed a corresponding optimized matching design for the common frequency bands of mobile communication, and developed a more targeted product (Telecom 28V GaN, which will be introduced separately).
Is the 7.28V GaN product suitable for use in the lower HF/VHF band?
The main advantages of GaN are high frequency and broadband. The use of gallium nitride at lower HF/VHF requires additional consideration for device stability design due to very high gain. At the same time, we can consider our high-performance 28V LDMOS to obtain RF performance similar to that of GaN.
Ultra-wideband application examples
NME6003H 150-3000MHz 15W
NU4012H 900-3000MHz 60W
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