Li Jinxi: Ph.D., researcher, doctoral tutor, obtained a bachelor's degree in semiconductor physics and device engineering from the Department of Electronic Engineering at Xi'an Jiaotong University in 1982, and obtained semiconductor materials and device physics at the 13th Institute of Electronics, Ministry of Information Industry in 1984. Master of Engineering, obtained a Ph.D. degree in optics from the Xi'an Institute of Optics and Fine Mechanics, Chinese Academy of Sciences in 1991. 1991-1993: Postdoctoral research in semiconductor research, engaged in the growth of GaAs materials and device research, made influential research work on III-V GaAs infrared quantum well detectors; 1993-1995: in semiconductors The institute is engaged in the research of new semiconductor materials. From 1995 to 2002, he served as director of the Materials Research Center of the Institute of Semiconductors, assistant to the director, member of the academic committee, engaged in research on new semiconductor materials, and presided over and completed the national key scientific and technological projects in the 1995 The construction of new national semiconductor materials research bases and new semiconductor materials projects in the North Microelectronics Base, including thin-layer epitaxial Si materials for sub-micron and deep sub-micron CMOS circuits; double heterogeneous SOI materials projects; GaN epitaxial materials for high-temperature MESFETs; MBE SiC material for high temperature power devices; 1999.10~2002.01: Visiting American scholars. 1999~present: Head of Semiconductor Functional Materials, Major Project of Innovation Engineering of Semiconductor Research Institute. At the same time of scientific research and scientific research management, actively explore ways to transform scientific research results into productivity, actively seek social capital, and participate in the establishment of Beijing Zhongke Gallium Semiconductor Co., Ltd., dedicated to the development and production of compound semiconductor single crystal materials and epitaxial materials. He is currently the executive chairman of the National Semiconductor Lighting Engineering R&D and Industry Alliance, and the director and researcher of the Institute of Semiconductors of the Chinese Academy of Sciences.
Representativeism:
1.Gao-F, Huang-CJ, Huang-DD, Li-JP, Sun-DZ, Kong-MY, Zeng-YP, Li-JM, Lin-LY, Changing the Size and Shape of Ge Island by Chemical Etching JOURNAL OF CRYSTAL GROWTH 2001, Vol 231, Iss 1-2, pp 17-21, 2001.
2.Wang-YS, Li-JM, Jin-YF, Wang-YT, Sun-GS, Lin-LY, The Formation and Stability of Si1-xCx Alloys in Si Implanted with Carbon CHINESE BULLET BULLETIN 2001, Vol 46, Iss 3 , pp 200-204, 2001.
3.Liu-B, Zhuang-QD, Yoon-SF, Dai-JH, Kong-MY, Zeng-YP, Li-JM, Lin-LY, Zhang-HJ, Properties and Turning of Intraband Optical-Absorption in InxGa1-xAs /GaAs Self-Assembled Quantum-Dot Superlattice INTERNATIONAL JOURNAL OF MODERN PHYSICS B 2001, Vol 15, Iss 13, pp 1959-1968, 2001.
4.Wang-JX, Sun-DZ, Wang-XL, Li-JM, Zeng-YP, Hou-X, Lin-LY, High-Quality GaN Grown by Gas-Source MBE JOURNAL OF CRYSTAL GROWTH 2001, Vol 227, Iss JUL, pp 386-389, 2001.
5. Sun-GS, Li-JM, Luo-MC, Zhu-SR, Wang-L, Zhang-FF, Lin-LY, Epitaxial-Growth of SiC on Complex Substrates JOURNAL OF CRYSTAL GROWTH 2001, Vol 227, Iss JUL, Pp 811-815, 2001.
6.Li-JM, Sun-GS, Zhu-SR, Wang-L, Luo-MC, Zhang-FF, Lin-LY, Homoepitaxial Growth and Device Characteristics of SiC on Si-Face-(0001) 6H-SiC JOURNAL OF CRYSTAL GROWTH 2001, Vol 227, Iss JUL, pp 816-819, 2001.
7.Gao-F, Huang-DD, Li-JP, Kong-MY, Sun-DZ, Li-JM, Zeng-YP, Lin-LY, Growth of SiGe Heterojunction Bipolar-Transistor Using Si2H6 Gas and Ge Solid Sources Molecular- Beam Epitaxy JOURNAL OF CRYSTAL GROWTH 2001, Vol 223, Iss 4, pp 489-493, 2001
8.Gao-F, Lin-YX, Huang-DD, Li-JP, Sun-DZ, Kong-MY, Zeng-YP, Li-JM, Lin-LY, Effects of Annealing Time and Si Cap Layer Thickness on the Si /SiGe/Si Heterostructures Thermal-Stability JOURNAL OF CRYSTAL GROWTH 2001, Vol 227, Iss JUL, pp 766-769, 2001.
9.Gao-F, Huang-DD, Li-JP, Lin-YX, Kong-MY, Li-JM, Zeng-YP, Lin-LY, The Growth of Si/SiGe/Si Structures for Heterojunction Bipolar-Transistor by Gas -Source Molecular-Beam Epitaxy JOURNAL OF CRYSTAL GROWTH 2000, Vol 220, Iss 4, pp 457-460, 2001.
10. "Field-assisted semiconductor photocathode theory and experiment" Science Press, 1993
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